Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Composants nanoélectroniques
سال: 2018
ISSN: 2516-3914
DOI: 10.21494/iste.op.2018.0222